Garba II, Abubakar YM, Nasiru R, Shehu U, Muhammad S, Imam AM, Galadima AI. Impact of Doping Concentration and Temperature on Carrier Mobilities in 4H-SiC Based Semiconductor Devices: A Sentaurus TCAD Simulation Study. IJSGS [Internet]. 2025 Mar. 31 [cited 2026 May 1];11(1):126-31. Available from: https://fugus-ijsgs.com.ng/index.php/ijsgs/article/view/792