GARBA, . I. I.; ABUBAKAR, Y. M.; NASIRU, R.; SHEHU , U.; MUHAMMAD , . S.; IMAM , A. M.; GALADIMA, A. I. Impact of Doping Concentration and Temperature on Carrier Mobilities in 4H-SiC Based Semiconductor Devices: A Sentaurus TCAD Simulation Study. International Journal of Science for Global Sustainability, [S. l.], v. 11, n. 1, p. 126–131, 2025. DOI: 10.57233/ijsgs.v11i1.792. Disponível em: https://fugus-ijsgs.com.ng/index.php/ijsgs/article/view/792. Acesso em: 1 may. 2026.