Impact of Doping Concentration and Temperature on Carrier Mobilities in 4H-SiC Based Semiconductor Devices: A Sentaurus TCAD Simulation Study

Abstract

This study examines the influence of doping concentration and temperature on carrier mobilities in semiconductor device development. The introduction of small quantities of dopants during crystal growth or device fabrication significantly affects the device's electrical properties. Using the Sentaurus Technology Computer Aided Design(TCAD) modeling tool, the work simulates and evaluates device characteristics, focusing on parameters like electron and hole mobilities. Doping concentration and temperature emerge as crucial factors shaping device behavior in both the epitaxial and bulk regions. Findings show that higher doping concentrations lead to reduced mobility, with electron mobility consistently exceeding hole mobility, underscoring electrons' role as the majority carriers in n-type devices. Schottky and ohmic contacts in different regions further illustrate the impact of doping on electrical properties. Additionally, the study reveals a linear relationship between temperature increases and reduced electron and hole mobilities, attributed to mechanisms such as impurity-induced defects and lattice vibrations. The stability of the detector's performance is emphasized at constant temperatures. Ultimately, this research offers valuable insights for optimizing semiconductor devices and advancing electronic technology.